Mass production phase-change RAM in June

2.5 years ago, Samsung had already presented a 512 Mbit prototype of a so-called 'phase-change memory chip', abbreviated to PRAM. This memory, -by Samsung branded ' Perfect RAM' because of the advantages the chips have compared to the current NAND- and NOR-flash memory- uses heat to crystallize the chemical mixture chalcogenide from amorphous phase. Bits in an amorphous phase represent a logical '0', while the crystallized bits code '1'. According to the latest reports, Samsung will start mass producing PRAM chips in June.

The biggest advantage of PRAM is the speed. Because phase-change memory does not have to remove the existing bit prior to changing (writing) it, the speed is up to 30 times greater than conventional flash memory. The 'PRAM' also features a longer life-expectancy than flash memory, expectedly up to 10 times longer. Like flash memory, PRAM is able to hold data without requiring electrical current, this means that it combines the speed of DRAM and the data retention of flash memory. The memory is also a lot more scalable than other available architectures; i.e. at equal capacity, PRAM chips are smaller than their flash memory counterparts and require less production steps to produce than for instance NOR-flash chips.

Compact and mobile devices are likely to benefit from the advantages of the PRAM memory. Samsung has not yet made any announcements regarding potential clients or products in which the PRAM modules will be used.

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