Intel produces prototypes 45nm processor

Intel Corporation revealed that it is using two dramatically new materials to build the insulating walls and switching gates of its 45 nanometer (nm) transistors. Hundreds of millions of these microscopic transistors - or switches - will be inside the next generation Intel Core 2 Duo, Intel Core 2 Quad and Xeon families of multi-core processors. The company also said it has five early-version products up and running -- the first of fifteen 45nm processor products planned from Intel.

Intel believes it has extended its lead of more than a year over the rest of the semiconductor industry with the first working 45nm processors of its next-generation 45nm family of products - codenamed "Penryn." The early versions, which will be targeted at five different computer market segments, are running Windows* Vista*, Mac OS X*, Windows* XP and Linux operating systems, as well as various applications. The company remains on track for 45nm production in the second half of this year.

Intel is the first to implement a combination of new materials that drastically reduces transistor leakage and increases performance in its 45nm process technology. The company will use a new material with a property called high-k, for the transistor gate dielectric, and a new combination of metal materials for the transistor gate electrode.

As the number of transistors on a chip roughly doubles every two years in accordance with Moore's Law, Intel is able to innovate and integrate, adding more features and computing processing cores, increasing performance, and decreasing manufacturing costs and cost per transistor. To maintain this pace of innovation, transistors must continue to shrink to ever-smaller sizes. However, using current materials, the ability to shrink transistors is reaching fundamental limits because of increased power and heat issues that develop as feature sizes reach atomic levels. As a result, implementing new materials is imperative to the future of Moore's Law and the economics of the information age.

Silicon dioxide has been used to make the transistor gate dielectric for more than 40 years because of its manufacturability and ability to deliver continued transistor performance improvements as it has been made ever thinner. Intel has successfully shrunk the silicon dioxide gate dielectric to as little as 1.2nm thick - equal to five atomic layers - on our previous 65nm process technology, but the continued shrinking has led to increased current leakage through the gate dielectric, resulting in wasted electric current and unnecessary heat.

Transistor gate leakage associated with the ever-thinning silicon dioxide gate dielectric is recognized by the industry as one of the most formidable technical challenges facing Moore's Law. To solve this critical issue, Intel replaced the silicon dioxide with a thicker hafnium-based high-k material in the gate dielectric, reducing leakage by more than 10 times compared to the silicon dioxide used for more than four decades.

Because the high-k gate dielectric is not compatible with today's silicon gate electrode, the second part of Intel's 45nm transistor material recipe is the development of new metal gate materials. While the specific metals that Intel uses remains secret, the company will use a combination of different metal materials for the transistor gate electrodes.

The combination of the high-k gate dielectric with the metal gate for Intel's 45nm process technology provides more than a 20 percent increase in drive current, or higher transistor performance. Conversely it reduces source-drain leakage by more than five times, thus improving the energy efficiency of the transistor.
Intel's 45nm process technology also improves transistor density by approximately two times that of the previous generation, allowing the company to either increase the overall transistor count or to make processors smaller. Because the 45nm transistors are smaller than the previous generation, they take less energy to switch on and off, reducing active switching power by approximately 30 percent. Intel will use copper wires with a low-k dielectric for its 45nm interconnects for increased performance and lower power consumption. It will also use innovative design rules and advanced mask techniques to extend the use of 193nm dry lithography to manufacture its 45nm processors because of the cost advantages and high manufacturability it affords.

The Penryn family of processors is a derivative of the Intel Core microarchitecture and marks the next step in Intel's rapid cadence of delivering a new process technology and new microarchitecture every other year. The combination of Intel's 45nm process technology, high-volume manufacturing capabilities, and leading microarchitecture design enabled the company to already develop its first working 45nm Penryn processors.